Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget.

2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2 ) and silicon nitride (SiNx ). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx /Si and SiO2 /Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 × 107 ℏ/2e Ω⁻¹ m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation.

Y-type hexagonal ferrite-based band-pass filter with dual magnetic and electric field tunability.

This work is on the design, fabrication and characterization of a hexagonal ferrite band-pass filter that can be tuned either with a magnetic field or an electric field. The filter operation is based on a straight-edge Y-type hexagonal ferrite resonator symmetrically coupled to the input and output microstrip transmission lines. The Zn2Yfilter demonstrated magnetic field tunability in the 8-12 GHz frequency range by applying an in-plane bias magnetic field H0 provided by a built-in permanent magnet. The insertion loss and 3 dB bandwidth within this band were 8.6 ± 0.4 dB and 350 ± 40 MHz, respectively. The electric field E tunability of the pass-band of the device was facilitated by the nonlinear magnetoelectric effect (NLME) in the ferrite. The E-tuning of the center frequency of the filter by (1150 ± 90) MHz was obtained for an input DC electric power of 200 mW. With efforts directed at a significant reduction in the insertion loss, the compact and power efficient magnetic and electric field tunable Zn2Y band-pass filter has the potential for use in novel reconfigurable RF/microwave devices and communication systems.

Evidence of Magnon-Mediated Orbital Magnetism in a Quasi-2D Topological Magnon Insulator.

We explore spin dynamics in Cu(1,3-bdc), a quasi-2D topological magnon insulator. The results show that the thermal evolution of the Landé g factor (g) is anisotropic: gin-plane decreases while gout-of-plane increases with increasing temperature T. Moreover, the anisotropy of the g factor (Δg) and the anisotropy of saturation magnetization (ΔMs) are correlated below 4 K, but they diverge above 4 K. We show that the electronic orbital moment contributes to the g anisotropy at lower T, while the topological orbital moment induced by thermally excited spin chirality dictates the g anisotropy at higher T. Our work suggests an interplay among topology, spin chirality, and orbital magnetism in Cu(1,3-bdc).

Coherent control of asymmetric spintronic terahertz emission from two-dimensional hybrid metal halides.

Next-generation terahertz (THz) sources demand lightweight, low-cost, defect-tolerant, and robust components with synergistic, tunable capabilities. However, a paucity of materials systems simultaneously possessing these desirable attributes and functionalities has made device realization difficult. Here we report the observation of asymmetric spintronic-THz radiation in Two-Dimensional Hybrid Metal Halides (2D-HMH) interfaced with a ferromagnetic metal, produced by ultrafast spin current under femtosecond laser excitation. The generated THz radiation exhibits an asymmetric intensity toward forward and backward emission direction whose directionality can be mutually controlled by the direction of applied magnetic field and linear polarization of the laser pulse. Our work demonstrates the capability for the coherent control of THz emission from 2D-HMHs, enabling their promising applications on the ultrafast timescale as solution-processed material candidates for future THz emitters.

Phase-resolved electrical detection of hybrid magnonic devices.

We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n = 1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py or YIG dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.

Experimental parameters, combined dynamics, and nonlinearity of a magnonic-opto-electronic oscillator (MOEO).

We report the construction and characterization of a comprehensive magnonic-opto-electronic oscillator (MOEO) system based on 1550-nm photonics and yttrium iron garnet (YIG) magnonics. The system exhibits a rich and synergistic parameter space because of the ability to control individual photonic, electronic, and magnonic components. Taking advantage of the spin wave dispersion of YIG, the frequency self-generation as well as the related nonlinear processes becomes sensitive to the external magnetic field. Besides being known as a band-pass filter and a delay element, the YIG delay line possesses spin wave modes that can be controlled to mix with the optoelectronic modes to generate higher-order harmonic beating modes. With the high sensitivity and external tunability, the MOEO system may find usefulness in sensing applications in magnetism and spintronics beyond optoelectronics and photonics.

Probing magnon-magnon coupling in exchange coupled Y[Formula: see text]Fe[Formula: see text]O[Formula: see text]/Permalloy bilayers with magneto-optical effects.

We demonstrate the magnetically-induced transparency (MIT) effect in Y[Formula: see text]Fe[Formula: see text]O[Formula: see text](YIG)/Permalloy (Py) coupled bilayers. The measurement is achieved via a heterodyne detection of the coupled magnetization dynamics using a single wavelength that probes the magneto-optical Kerr and Faraday effects of Py and YIG, respectively. Clear features of the MIT effect are evident from the deeply modulated ferromagnetic resonance of Py due to the perpendicular-standing-spin-wave of YIG. We develop a phenomenological model that nicely reproduces the experimental results including the induced amplitude and phase evolution caused by the magnon-magnon coupling. Our work offers a new route towards studying phase-resolved spin dynamics and hybrid magnonic systems.

Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions.

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O_{x} formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.